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TPCF8102
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOS III)
TPCF8102
Notebook PC Applications Portable Equipment Applications
* * * * Low drain-source ON resistance: RDS (ON) = 24 m (typ.) High forward transfer admittance: |Yfs| = 14 S (typ.) Low leakage current: IDSS = -10 A (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -200 A) Unit: mm
Absolute Maximum Ratings (Ta = 25C)
Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Note 4) EAR Tch Tstg Rating -20 -20 8 -6 -24 2.5 0.7 5.9 -3 0.25 150 -55~150 Unit V V V A W W mJ A mJ C C
Pulsed (Note 1) (t = 5 s) (Note 2a) (t = 5 s) (Note 2b)
Drain power dissipation Drain power dissipation
JEDEC JEITA TOSHIBA
2-3U1A
Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy Channel temperature Storage temperature range
Weight: 0.011 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics Thermal resistance, channel to ambient (t = 5 s) (Note 2a) Thermal resistance, channel to ambient (t = 5 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 50.0 178.6 Unit C/W C/W
Circuit Configuration
8 7 6 5
Note: (Note 1), (Note 2), (Note 3), (Note 4) and (Note 5): See the next page. This transistor is an electrostatic-sensitive device. Please handle with caution.
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2
3
4
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TPCF8102
Electrical Characteristics (Ta = 25C)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Symbol IGSS IDSS V (BR) DSS V (BR) DSX Vth RDS (ON) Drain-source ON resistance RDS (ON) RDS (ON) Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Turn-on time Switching time Fall time Turn-off time Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge tf toff Qg Qgs Qgd |Yfs| Ciss Crss Coss tr VGS ton 0V -5 V 4.7 ID = -3.0 A VOUT RL = 3.33 VDS = -10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 8 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8 V VDS = -10 V, ID = -200 A VGS = -1.8 V, ID = -1.5 A VGS = -2.5 V, ID = -3.0 A VGS = -4.5 V, ID = -3.0 A VDS = -10 V, ID = -3.0 A Min -20 -12 -0.5 7 VDD -16 V, VGS = -5 V, - ID = -6.0 A Typ. 67 36 24 14 1550 215 265 7 13 21 68 19 14 5 Max 10 -10 -1.2 90 41 30 ns nC pF S m Unit A A V V
VDD -10 V - Duty < 1%, tw = 10 s =
Source-Drain Ratings and Characteristics (Ta = 25C)
Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF Test Condition IDR = -6.0 A, VGS = 0 V Min Typ. Max -24 1.2 Unit A V
Forward voltage (diode)
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TPCF8102
Marking (Note 5)
Lot code (month) Lot No.
Part No. (or abbreviation code)
F3B
Product-specific code Lot code (year) A line indicates lead (Pb)-free package or lead (Pb)-free finish.
Pin #1
Note 1: Ensure that the channel temperature does not exceed 150C.
Note 2: (a) Device mounted on a glass-epoxy board (a)
(b) Device mounted on a glass-epoxy board (b)
FR-4 25.4 x 25.4 x 0.8 Unit: (mm)
FR-4 25.4 x 25.4 x 0.8 Unit: (mm)
(a)
(b)
Note 3: VDD = -16 V, Tch = 25C (initial), L = 0.5 mH, RG = 25 , IAR = -3.0 A Note 4: Repetitive rating: pulse width limited by maximum channel temperature Note 5: A dot on the lower left of the marking indicates Pin 1.
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TPCF8102
ID - VDS
-5 -5 -4.5 -4 -3 -1.6 -2.5 -1.9 -2 -3 -8 -1.8 -10 -1.7 -2.5 -3 -4 -5 -6 -2
ID - VDS
Common source Ta = 25C Pulse test -1.9 -1.8
-4
Drain current ID (A)
Drain current ID (A)
-1.7 -4 -1.6 -1.5 VGS = -1.4 V 0 0
-2
-1.5
-1
VGS = -1.4 V Common source Ta = 25C Pulse test -0.2 -0.4 -0.6 -0.8 -1.0
-2
0 0
-1
-2
-3
-4
-5
Drain-source voltage
VDS (V)
Drain-source voltage
VDS (V)
ID - VGS
-10 Common source VDS = -10 V Pulse test -0.5
VDS - VGS
Common source Ta = 25C Pulse test
-8
VDS (V) Drain-source voltage
Ta = 25C Ta = -55C
-0.4
Drain current ID (A)
-6
-0.3
-4
-0.2 ID = -6 A -0.1 -3 A -1.5 A -2 -4 -6 -8 -10
-2 Ta = 100C 0 0
-0.5
-1.0
-1.5
-2.0
-2.5
0 0
Gate-source voltage
VGS (V)
Gate-source voltage
VGS (V)
|Yfs| - ID
100 Common source VDS = -10 V Pulse test Ta = 25C 10 Ta = 100C 1000 Common source Ta = 25C Pulse test
RDS (ON) - ID
|Yfs| (S)
Ta = -55C
Drain-source on resistance RDS (ON) (m)
Forward transfer admittance
100
-1.8 V -2.5 V
VGS = -4.5 V 10
1
0.1 -0.1
-1
-10
-100
1 -0.1
-1
-10
-100
Drain current ID (A)
Drain current ID (A)
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TPCF8102
RDS (ON) - Ta
160 Common source -100 Common source Ta = 25C Pulse test
IDR - VDS
Drain-source on resistance RDS (ON) (m)
Drain reverse current IDR
120
(A)
Pulse test
80 VGS = -1.8 V
-2.5 A ID = -1.5 A -6 A ID = -1.5, -2.5 A ID = -1.5, -2.5, -6 A
-10
-2.0 V -4 V -1.8 V -1 V
40
-2.5 V
-4.5 V 0 -80 -40 0 40
VGS = 0 V 160 -1 0 0.4 0.8 1.2 1.6 2
80
120
Ambient temperature Ta (C)
Drain-source voltage
VDS (V)
Capacitance - VDS
10000 VGS = 0 V f = 1 MHz Ta = 25C Ciss 2.0 Common source VDS = -10 V ID = -200 A Pulse test
Vth - Ta
Vth (V) Gate threshold voltage
1.5
(pF) Capacitance C
1000
Coss Crss
1.0
100
0.5
0 -80 10 0.1 1.0 10 100
-40
0
40
80
120
160
Ambient temperature Ta (C)
Drain-source voltage
VDS (V)
PD - Ta
3 (1) t = 5 s (1) Device mounted on a glass-epoxy board (a) (Note 2a) (2) Device mounted on a glass-epoxy board (b) (Note 2b) -20
Dynamic input/output characteristics
Common source ID = -6 A Ta = 25C Pulse test -12 VGS -4 V VDD = -16 V -4 -8 V -4 -12 -20
Drain power dissipation PD (W)
VDS (V)
-16
VDS
-16
2
Drain-source voltage
1.5 (1) DC 1 (2) t = 5 s 0.5 (2) DC
-8
-8
0 0
40
80
120
160
0 0
8
16
24
32
0 40
Ambient temperature Ta (C)
Total gate charge Qg (nC)
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Gate-source voltage
VGS (V)
2.5
TPCF8102
rth - tw
1000 Device mounted on a glass-epoxy board (b) (Note 2b)
Transient thermal impedance rth (C/W)
100
Device mounted on a glass-epoxy board (a) (Note 2a) 10
1
0.1 1m
10 m
100 m
1
10
100
1000
Pulse width
tw
(s)
Safe operating area
-100
ID max (pulsed)*
Drain current ID (A)
1 ms* -10 10 ms*
-1
*: Single pulse Ta = 25C Curves must be derated linearly with increase in
temperature -0.1 -0.1
VDSS max -1 -10 -100
Drain-source voltage
VDS (V)
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TPCF8102
RESTRICTIONS ON PRODUCT USE
* The information contained herein is subject to change without notice.
20070701-EN
* TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations.
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